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    In recent years, a common strategy, to obtain more uniform and controlled synthesis of polyelectrolytes multi-layers (PEMs), relies on a previous polyethylenimine (PEI) coating of the substrate surface. PEI is a synthetic cat-ionic... more
    In recent years, a common strategy, to obtain more uniform and controlled synthesis of polyelectrolytes multi-layers (PEMs), relies on a previous polyethylenimine (PEI) coating of the substrate surface. PEI is a synthetic cat-ionic polymer which provides a positive charge distribution on the materials to be covered with PEMs. Despite being an important step, this pre-layer deposition is frequently overlooked and no comprehensive characterizations or deep discussions are reported in literature. In that sense, this work reports on the synthesis of a typical PEI film that works as a precursor for PEMs, and its detailed physicochemical characterization. As many PEMs are produced for antibacterial and biomedical applications, the cytotoxicity of the film was also tested using fibro-blasts, and its antibacterial activity was studied using Staphylococcus aureus and Pseudomonas aeruginosa. Our results present the formation of an ultra-thin film of PEI with a thickness around 3.5 nm, and with a significant percent of NH 3 + (35% of the total amount of N) in its chemical structure; NH 3 + is a key chemical group because it is considered an important bacterial killer agent. The film was stable and did not present important cytotoxic effect for fibroblasts up to 7 days, contrary to other reports. Finally, the PEI film showed high antibacterial activity against the S. aureus strain: reductions in cell density were higher than 95% up to 24 h.
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    We have studied the mechanism of Be incorporation in InP homoepitaxial films grown by metalorganic molecular beam epitaxy. The actual Be concentration in the films reaches 1–2×1019 cm−3 while the hole concentration saturates at a lower... more
    We have studied the mechanism of Be incorporation in InP homoepitaxial films grown by metalorganic molecular beam epitaxy. The actual Be concentration in the films reaches 1–2×1019 cm−3 while the hole concentration saturates at a lower value &squflg;∼2×1018 cm−3 in our case). The measured lattice mismatch between film and substrate depends both on growth temperature and Be flux. The resulting
    Page 1. Climbing the Academy Ladder in Brazil: Physics Mônica Alonso Cottaa, Marília J. Caldasb, and Marcia C. Barbosac aInstituto de Física, Universidade Estadual de Campinas, Campinas, Brazil; bInstituto de Física, Universidade ...
    ... JRR Bortoleto, HR Gutiérrez, MA Cotta, J. Bettini, LP Cardoso, MMG de Carvalho. Abstract. ... Cross-section transmission electron microscopy (XTEM) and transmission electron diffraction (TED) images were obtained using a JEM 3010 URP... more
    ... JRR Bortoleto, HR Gutiérrez, MA Cotta, J. Bettini, LP Cardoso, MMG de Carvalho. Abstract. ... Cross-section transmission electron microscopy (XTEM) and transmission electron diffraction (TED) images were obtained using a JEM 3010 URP 300-kV TEM. ...
    We have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the gr owth of... more
    We have recently shown that spatial ordering for epitaxially grown InP dots can be obtained using the periodic stress field of compositional modulation on the InGaP buffer layer. The aim of this present work is to study the gr owth of films of GaP by Chemical Beam Epitaxy (CBE), with in-situ monitoring by Reflectio n High Energy Electron Diffraction (RHEED),
    ABSTRACT We investigate the formation of compositional modulation and atomic ordering in InGaP films. Such bulk properties—as well as surface morphologies—present a strong dependence on growth parameters, mainly the V/III ratio. Our... more
    ABSTRACT We investigate the formation of compositional modulation and atomic ordering in InGaP films. Such bulk properties—as well as surface morphologies—present a strong dependence on growth parameters, mainly the V/III ratio. Our results indicate the importance of surface diffusion and, particularly, surface reconstruction for these processes. Most importantly from the application point of view, we show that the compositional modulation is not necessarily coupled to the surface instabilities, so that smooth InGaP films with periodic compositional variation could be obtained. This opens a new route for the generation of templates for quantum dot positioning and three-dimensional arrays of nanostructures.